S.T.M. studies on semiconductor surfaces and metal-semiconductor interfaces

Photoemission Studies of Metal-semiconductor Interfaces

Metal-Semiconductor Interfaces in Thin-Film Transistors

The metal-semiconductor interface in thin-film transistors (TFTs) is one of the bottlenecks on the development of these devices. Although this interface does not play an active role in the transistor operation, a low-quality interface can be responsible for a low performance operation. In a-Si TFTs, a doped film can be used to improve this interface, however, in other TFT technologies, there is...

Chemical tuning of metal-semiconductor interfaces.

We report a study of the Schottky barrier for Pb films grown on Si surfaces terminated by various metals (Ag, In, Au, and Pb) to explore the atomic-scale physics of the interface barrier and a means to control the barrier height. Electronic confinement by the Schottky barrier results in quantum well states in the Pb films, which are measured by angle-resolved photoemission. The barrier height i...

Self-assembled metal–semiconductor compound nanocrystals on Group IV semiconductor surfaces

Nanocrystals of material B may form on a substrate of material A in order to relieve the strain from the B/A crystalline mismatch. In the most simplistic approximation, if such an elastic relaxation outweighs the additional surface energy due to the island walls, it will create the thermodynamic tendency for the nanocrystal formation. Hence one can ‘engineer’ ultra-small and crystallographicall...

Electron states and recombination velocities at semiconductor surfaces and interfaces

2014 The concept of dangling bond states is reviewed. It is shown that the Schottky barrier height can be correlated with the average self energy of surface dangling bonds. The same property holds true for band offsets at semiconductor heterojunctions. The model explains the relation found by Tersoff between these two quantities. A second part is devoted to the theoretical determination of surf...